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lt5517 1 5517f bpf 5v v cc bpf rf + rf lpf lt5517 i out + i out 0 2xloen enable 2xlo input lpf dsp q out + q out 90 2 5517 f01 lna vga vga wireless infrastructure high linearity direct conversion i/q receiver high linearity i/q demodulator , ltc and lt are registered trademarks of linear technology corporation. rf input frequency range: 40mhz to 900mhz high iip3: 21dbm at 800mhz high iip2: 58dbm at 800mhz i/q gain mismatch: 0.3db max i/q phase mismatch: 0.7 noise figure: 12.4db at 800mhz conversion gain: 3.3db at 800mhz baseband bandwidth: 130mhz single ended, 50 w matched 2xlo input shutdown mode 16-lead qfn (4mm 4mm) package with exposed pad 40mhz to 900mhz quadrature demodulator figure 1. high signal-level i/q demodulator for 450mhz infrastructure receiver i/q output power, im3, im2 vs rf input power the lt 5517 is a 40mhz to 900mhz quadrature demodu- lator optimized for high linearity receiver applicationswhere high dynamic range is important. it is suitable for communications receivers where an rf or if signal is directly converted into i and q baseband signals with a bandwidth up to 130mhz. the lt5517 incorporates bal- anced i and q mixers, lo buffer amplifiers and a precision, broadband quadrature generator derived from an on-chip divide-by-two circuit. the superior linearity and low noise performance of the lt5517 is achieved across its full frequency range. a well- balanced divide-by-two circuit generates precision quadra- ture lo carriers to drive the i mixer and the q mixer. consequently, the outputs of the i-channel and the q-channel are well matched in amplitude, and their phases are 90 apart. the lt5517 also provides excellent 50 w impedance matching at the 2xlo port across its entirefrequency range. rf input power (dbm) ?8 ?00 p out , im3, im2 (dbm/tone) ?0 ?0 ?0 ?0 0 20 p out im3 im2 ?4 10 ? ? 5517 f01b 2 t a = 25 c p 2xlo = ?0dbm f 2xlo = 1602mhz f rf1 = 799.9mhz f rf2 = 800.1mhz features descriptio u applicatio s u typical applicatio u downloaded from: http:///
lt5517 2 5517f power supply voltage ............................................ 5.5v enable voltage .................................................... 0v, v cc 2xlo voltage (10dbm equivalent) .......................... 1v rf + to rf differential voltage (10dbm equivalent) ................................................. 2v operating ambient temperature ..............40 c to 85 c storage temperature range ................. 65 c to 125 c maximum junction temperature .......................... 125 c order part number consult ltc marketing for parts specified with wider operating temperature ranges. lt5517euf absolute axi u rati gs w ww u package/order i for atio uu w (note 1) t a = 25 c. v cc = 5v, en = v cc , f rf1 = 799.9mhz, f rf2 = 800.1mhz, f 2xlo = 1602mhz, p 2xlo = 10dbm, unless otherwise noted. (notes 2, 3) (test circuit shown in figure 2) parameter conditions min typ max units rf frequency range 40 to 900 mhz 2xlo frequency range 80 to 1800 mhz 2xlo power 15 to 0 dbm 2xlo port return loss internally matched to a 50 w source 20 db conversion gain voltage gain, load impedance = 1k w 0 3.3 db gain variation vs temperature ?0 c to 85 c 0.01 db/ c noise figure 12.4 db input 3rd order intercept 2-tone, 10dbm/tone, d f = 200khz 21 dbm input 2nd order intercept 2-tone, 10dbm/tone, d f = 200khz 58 dbm input 1db compression 10 dbm baseband bandwidth 130 mhz i/q gain mismatch (note 4) ?.3 0.03 0.3 db i/q phase mismatch (note 4) ?.5 0.7 3.5 deg output impedance differential 120 w 2xlo to rf leakage 69 dbm lo to rf leakage 80 dbm rf to 2xlo isolation 63 db ac electrical characteristics t jmax = 125 c, q ja = 37 c/w uf part marking 5517 16 15 14 13 5 6 7 8 top view uf package 16-lead (4mm 4mm) plastic qfn exposed pad (pin 17) is gnd, must be soldered to pcb 9 10 11 12 4 3 2 1 gndrf rf + rf gndrf v cc gnd2xlo gnd i out + i out q out + q out en v cc v cc v cc 17 downloaded from: http:///
lt5517 3 5517f dc electrical characteristics t a = 25 c. v cc = 5v unless otherwise noted. parameter conditions min typ max units supply voltage 4.5 5.25 v supply current 70 90 110 ma shutdown current en = low 0.1 20 m a turn-on time (note 5) 200 ns turn-off time (note 5) 300 ns en = high (on) 1.6 v en = low (off) 1.3 v en input current v enable = 5v 2 m a output dc offset voltage f lo = 1602mhz, p lo = ?0dbm 0.5 30 mv ( ? i out + ?i out ? , ? q out + ?q out ? ) output dc offset variation vs temperature 40 c to 85 c7 m v/ c note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired.note 2: tests are performed as shown in the configuration of figure 2. note 3: specifications over the 40 c to 85 c temperature range are assured by design, characterization and correlation with statistical processcontrol. note 4: measured at p 2xlo = 10dbm and output frequency = 1mhz. note 5: turn on and turn off times are based on rise and fall times of the output baseband voltage with rf input power of 10dbm. typical perfor a ce characteristics uw supply current vs supply voltage conv gain, nf, iip3vs rf input frequency supply voltage (v) 4.5 supply current (ma) 80 90 5.5 5517 g01 7060 4.75 5 5.25 110100 t a = 85 c t a = 25 c t a = 40 c rf input frequency (mhz) 0 0 gain (db), nf (db), iip3 (dbm) 5 15 20 25 200 400 500 900 5517 g02 10 100 300 600 700 800 iip3 nf conv gain p 2xlo = ?0dbm v cc = 5v t a = 25 c rf input frequency (mhz) 0 30 iip2 (dbm) 40 60 70 80 200 400 500 900 5517 g03 50 100 300 600 700 800 p 2xlo = ?0dbm v cc = 5v t a = 25 c iip2 vs rf input frequency f rf = 800mhz, p 2xlo = ?0dbm, unless otherwise noted. (test circuit shown in figure 2) downloaded from: http:///
lt5517 4 5517f i/q output power, im3vs rf input power rf input power (dbm) ?8 ?00 p out , im3 (dbm/tone) ?0 ?0 ?0 ?0 0 20 ?4 ?0 6 2 5517 g04 2 t a = 85 c t a = 25 c t a = 40 c f 2xlo = 1602mhz v cc = 5v f rf1 = 799.9mhz f rf2 = 800.1mhz output power im3 rf input frequency (mhz) 0 gain mismatch (db) 0 0.20 0.40 800 5517 g05 0.20 0.40 0.80 200 400 600 100 300 500 700 900 0.60 0.80 0.60 t a = 85 c t a = 25 c t a = 40 c p 2xlo = ?0dbm f bb = 1mhz v cc = 5v rf input frequency (mhz) 0 ? phase mismatch (degree) ? 0 2 4 200 400 500 900 5517 g06 ? 100 300 600 700 800 6 t a = 85 c t a = 25 c t a = 40 c p 2xlo = ?0dbm f bb = 1mhz v cc = 5v i/q gain mismatchvs rf input frequency i/q phase mismatchvs rf input frequency conv gain, iip3 vs supply voltage nf vs 2xlo input power conv gain, iip3vs 2xlo input power supply voltage (v) 4.5 16 20 28 5.25 5517 g07 12 8 4.75 5 5.5 40 24 iip3 conv gain (db), iip3 (dbm) t a = 85 c t a = 25 c t a = 40 c f 2xlo = 1602mhz v cc = 5v conv gain f rf1 = 799.9mhz f rf2 = 800.1mhz 2xlo input power (dbm) ?5 nf (db) 10 12 14 ? 5517 g08 8 6 4 ?2 ? ? 0 f rf = 800mhz f rf = 400mhz f rf = 200mhz f rf = 40mhz t a = 25 c v cc = 5v 2xlo input power (dbm) ?5 0 conv gain (db), iip3 (dbm) 4 8 12 16 20 24 iip3 ?2 9 6 ? 5517 g09 0 t a = 85 c t a = 25 c t a = 40 c f 2xlo = 1602mhz v cc = 5v f rf1 = 799.9mhz f rf2 = 800.1mhz conv gain iip2 vs 2xlo input power lo-rf leakagevs 2xlo input power 2xlo input power (dbm) ?5 iip2 (dbm) 45 50 55 ? 0 5517 g10 40 35 30 ?2 9 ? 60 65 70 t a = 85 c t a = 25 c t a = 40 c f 2xlo = 1602mhz v cc = 5v 2xlo input power (dbm) ?5 ?20 lo-rf leakage (dbm) ?10 ?00 ?0 ?0 ?0 ?0 ?2 9 6 ? 5517 g11 0 t a = 25 c v cc = 5v f 2xlo = 1600mhz f 2xlo = 800mhz f 2xlo = 80mhz 2xlo-rf leakagevs 2xlo input power 2xlo input power (dbm) ?5 ?20 2xlo-rf leakage (dbm) ?10 ?00 ?0 ?0 ?0 ?0 ?2 9 6 ? 5517 g12 0 t a = 25 c v cc = 5v f 2xlo = 1600mhz f 2xlo = 800mhz f 2xlo = 80mhz typical perfor a ce characteristics uw f rf = 800mhz, p 2xlo = ?0dbm, unless otherwise noted. (test circuit shown in figure 2) downloaded from: http:///
lt5517 5 5517f uu u pi fu ctio s gndrf (pins 1, 4): ground pins for rf termination. these pins are not internally connected, and should beconnected to the pcb ground plane for best rf isolation. rf + , rf (pins 2, 3): differential rf input pins. these pins are internally biased to 2.30v. these two pins should bedc blocked when connected to ground or other matching components. the inputs can be terminated in a single- ended configuration, but differential input drive is pre- ferred for best performance. an external matching network is required for impedance transformation. en (pin 5): enable pin. when the input voltage is higher than 1.6v, the circuit is completely turned on. when theinput voltage is less than 1.3v, the circuit is turned off. v cc (pins 6, 7, 8, 12): power supply pins. these pins should be decoupled using 1000pf and 0.1 m f capacitors. gnd (pins 9, 11): ground pins. these pins are internally tied together and to the exposed pad. they should beconnected to the pcb ground plane. 2xlo (pin 10): 2xlo input pin. this pin is internally biased to 1v. the input signal? frequency should be twicethat of the desired demodulator lo frequency. the pin should be ac coupled with an external dc blocking capacitor. q out , q out + (pins 13, 14): differential baseband output pins of the q-channel. the internal dc bias voltage isv cc ?0.78v for each pin. i out , i out + (pins 15, 16): differential baseband output pins of the i-channel. the internal dc bias voltage isv cc ?0.78v for each pin. exposed pad (pin 17): ground return for the entire ic. this pin must be soldered to the printed circuit boardground plane. rf-lo isolationvs rf input power conv gainvs baseband frequency rf, 2xlo port return lossvs frequency rf input power (dbm) ?5 100 110 120 5 5517 g13 9080 ?0 ? 0 10 70 6050 rf-lo isolation (db) f rf = 800mhz f rf = 400mhz f rf = 40mhz t a = 25 c v cc = 5v baseband frequency (mhz) ? conv gain (db) 0 2 4 6 0.1 10 100 1000 5517 g14 ? 1 t a = 85 c f 2xlo = 1602mhz v cc = 5v t a = 40 c t a = 25 c frequency (ghz) 0 return loss (db) ?0 ? 0 1.60 5517 g15 ?5 rf lo ?0 ?5 0.40 0.80 1.20 2 typical perfor a ce characteristics uw f rf = 800mhz, p 2xlo = ?0dbm, unless otherwise noted. (test circuit shown in figure 2) downloaded from: http:///
lt5517 6 5517f block diagra w rf + i out + 2xlo 2 0 bias 16 i out 15 q out + 14 q out 13 lo buffers lpf i-mixer lpf q-mixer 2 6 v cc 5 en 9 gnd gnd exposed pad 7 v cc 8 v cc 12 v cc rf 5517 bd 3 11 17 10 rf amp 90 downloaded from: http:///
lt5517 7 5517f figure 2. evaluation circuit schematic figure 4. component side layout of evaluation board figure 3. component side silkscreen of evaluation board test circuit i out j3 i out + j4 rf j1 q out + j5 q out j6 c103.3pf r2 0 c111nf c12 1nf j2 2xlo c51nf en 5678 16 15 14 13 17 r1100k c30.1 f c42.2 f v cc lt5517 gndrfrf + rf gndrf v cc gnd 2xlo gnd 12 3 4 1211 10 9 i out + i out q out + q out env cc v cc v cc reference designation value size part number c1,c2,c5,c11,c12 1nf 0603 avx 06033a102jat1a c3 0.1 f 0603 taiyo yuden emk107b c4 2.2 f 0603 taiyo yuden jmk107b c10 3.3pf 0603 avx 06033a3r3kat2a c13 to c16 10pf 0805 avx 08055a100zat1a r1 100k 0603 optional r2 0 0603 jumper, optional t1 1:4 m/a com mabaes0054 5517 f02 c15 10pf c16 10pf c1 1nf t1 mabaes0054 c2 1nf c13 10pf c14 10pf downloaded from: http:///
lt5517 8 5517f applicatio s i for atio wu uu the lt5517 is a direct i/q demodulator targeting highlinearity receiver applications. it consists of an rf ampli- fier, i/q mixers, a quadrature lo carrier generator and bias circuitry. the rf signal is applied to the inputs of the rf amplifier, and is then demodulated into i-channel and q-channel baseband signals using precision quadrature lo signals, which are internally generated using a divide-by-two cir- cuit. the demodulated i/q signals are lowpass filtered internally with a 3db bandwidth of 130mhz. the differen- tial outputs of the i-channel and q-channel are well matched in amplitude and their phases are 90 apart across the full frequency range from 40mhz to 900mhz.rf input port differential drive is recommended for the rf inputs as shown in figure 2. a low loss 1:4 transformer is used on the demonstration board for a wide bandwidth input impedance match and to assure good noise figure and maximum demodulator gain. single-ended to differential conversion can also be implemented using narrowband l-c circuits to produce the required balanced waveforms at the rf + and rf inputs using three discrete elements as shown in figure 5. nominal values are listed in table 1. (inpractice, these values should be compensated according to the parasitics of the pcb.) the conversion gain and nf of the receiver are similar to those of the transformer-coupled demo board, because the single-ended to differ- ential conversion has a 1:4 impedance transformation, similar to the transformer. table 1. the component values of matching network l sh , c s1 and c s2 frequency (mhz) l sh (nh) c s1 , c s2 (pf) 40 437 71.1 100 169 28.6 200 80.8 14.3 300 51.5 9.6 400 37 7.2 500 28.3 5.8 600 22.6 4.9 700 18.5 4.2 800 15.6 3.7 900 13.5 3.3 the differential impedance of the rf inputs is listed intable 2. the rf inputs may also be terminated in a single- ended configuration. in this case either the rf + or the rf input can be simply ac coupled to a 50 w source, while the other rf input is connected to ground with a 1nf capacitor.note, however, that this will result in degraded conversion gain and noise figure in most cases. figure 5. rf input matching network at 800mhz l sh 15.6nh to rf + to rf matching network c s1 3.7pf rf input 5517 f05 c s2 3.7pf downloaded from: http:///
lt5517 9 5517f table 2. rf input differential impedance frequency differential input differential s11 (mhz) impedance ( w ) mag angle( ) 40 240.1-j10.3 0.665 0.8 100 245.5-j25.9 0.664 2.5 200 236.8-j50.0 0.664 5.1 300 223.6-j70.5 0.663 ?.6 400 207.9-j86.3 0.662 10.2 500 190.6-j98.1 0.660 12.7 600 173.2-j105.8 0.657 15.3 700 156.2-j110.2 0.655 17.9 800 141.2-j111.8 0.651 20.4 900 129.5-j114.5 0.650 22.9 2xlo input portto ease the interface of the receiver with the external 2xlo input, the 2xlo port is designed with on-chip 50 w imped- ance matching up to 2ghz. the input is internally biasedat 1v. a 1nf dc blocking capacitor is required when connected to the external 2xlo source. the 2xlo frequency is required to be twice the desired operating frequency in order for the chip to generate the applicatio s i for atio wu uu quadrature local oscillator (lo) signals for the demodu-lator. the on-chip divide-by-two circuit delivers well- matched, quadrature lo carriers to the i mixer and the q mixer. i-channel and q-channel outputs each of the i-channel and q-channel outputs is internally connected to v cc though a 60 w resistor. the output dc bias voltage is v cc ?0.78v. the outputs can be dc coupled or ac coupled to the external loads. the differential outputimpedance of the demodulator is 120 w in parallel with a 10pf internal capacitor, forming a lowpass filter with a 3db corner frequency at 130mhz. the load impedance, r load , should be larger than 600 w to assure full gain. the gain is reduced by 20 ?log(1 + 120 w /r load ) in db when the differential output is terminated by r load . for ex- ample, the gain is reduced by 6.85db when each output pinis connected to a 50 w load (or 100 w differential loads). the output should be taken differentially (or by usingdifferential-to-single-ended conversion) for best rf per- formance, including nf and im2. proper filtering of the unwanted high frequency mixing product is also impor- tant to maintain the highest linearity. a convenient figure 6. rf input equivalent circuit with external broadband matching 3 2 v cc lt5517 rf + 12 3 54 rf 5517 f06 250 2.30v rf j1 c103.3pf c1 1nf t1 mabaes0054 c2 1nf downloaded from: http:///
lt5517 10 5517f figure 7. i/q output equivalent circuit applicatio s i for atio wu uu 15 16 v cc 10pf i out + i out 5517 f07 13 14 10pf q out + q out 60 60 60 60 approach is to terminate each output with a shunt capaci-tor. the capacitor value can be optimized depending upon the operating frequency and the specific pcb layout. the phase relationship between the i-channel output sig- nal and the q-channel output signal is fixed. when the lo input frequency is higher than the rf input frequency, then the q-channel outputs (q out + , q out ) lead the i-channel outputs (i out + , i out ) by 90 . when the lo input frequency is lower than the rf inputfrequency, then the q-channel outputs lag the i-channel outputs by 90 . note that the phase relationship of the i- and q-channel outputs relative to the lo can vary by 180 , depending on start-up conditions. this is the nature of afrequency divider-based quadrature phase generator. when ac output coupling is used, the resulting highpass filter? 3db roll-off frequency is defined by the r-c constant of the blocking capacitor and r load , assuming r load > 600 w . care should be taken when the demodulator? outputs aredc coupled to the external load to make sure that the i/q mixers are biased properly. if the current drain from the outputs exceeds 6ma, there can be significant degrada- tion of the linearity performance. each output can sink no more than 13ma when connected to an external load with a dc voltage higher than v cc ?0.78v. downloaded from: http:///
lt5517 11 5517f uf package 16-lead plastic qfn (4mm 4mm) (reference ltc dwg # 05-08-1692) u package descriptio 4.00 0.10 (4 sides) note:1. drawing conforms to jedec package outline mo-220 variation (wggc) 2. all dimensions are in millimeters 3. dimensions of exposed pad on bottom of package do not include mold flash. mold flash, if present, shall not exceed 0.15mm on any side 4. exposed pad shall be solder plated pin 1top mark 0.55 0.20 16 15 12 bottom view?xposed pad 2.15 0.10 (4-sides) 0.75 0.05 r = 0.115 typ 0.30 0.05 0.65 bsc 0.200 ref 0.00 ?0.05 (uf) qfn 0503 recommended solder pad pitch and dimensions 0.72 0.05 0.30 0.05 0.65 bsc 2.15 0.05 (4 sides) 2.90 0.05 4.35 0.05 package outline information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. downloaded from: http:///
lt5517 12 5517f linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 fax: (408) 434-0507 www.linear.com ? linear technology corporation 2004 lt/tp 0104 1k ? printed in usa related parts part number description comments infrastructure lt5511 high linearity upconverting mixer rf output to 3ghz, 17dbm iip3, integrated lo buffer lt5512 dc-3ghz high signal level downconverting mixer dc to 3ghz, 21dbm iip3, integrated lo buffer lt5515 1.5ghz to 2.5ghz direct conversion quadrature demodulator 20dbm iip3, integrated lo quadrature generator lt5516 0.8ghz to 1.5ghz direct conversion quadrature demodulator 21.5dbm iip3, integrated lo quadrature generator lt5520 1.3ghz to 2.3ghz high linearity upconverting mixer 15.9dbm iip3, single ended, 50 w matched rf and lo ports lt5522 600mhz to 2.7ghz high signal level downconverting mixer 4.5v to 5.25v supply, 25dbm iip3 at 900mhz, nf = 12.5db, 50 w single-ended rf and lo ports rf power detectors lt5504 800mhz to 2.7ghz rf measuring receiver 80db dynamic range, temperature compensated, 2.7v to 5.25v supply ltc 5505 rf power detectors with >40db dynamic range 300mhz to 3ghz, temperature compensated, 2.7v to 6v supply ltc5507 100khz to 1000mhz rf power detector 100khz to 1ghz, temperature compensated, 2.7v to 6v supply ltc5508 300mhz to 7ghz rf power detector 44db dynamic range, temperature compensated, sc70 package ltc5509 300mhz to 3ghz rf power detector 36db dynamic range, low power consumption, sc70 package ltc5532 300mhz to 7ghz precision rf power detector precision v out offset control, adjustable gain and offset rf building blocks lt5500 1.8ghz to 2.7ghz receiver front end 1.8v to 5.25v supply, dual-gain lna, mixer, lo buffer lt5502 400mhz quadrature if demodulator with rssi 1.8v to 5.25v supply, 70mhz to 400mhz if, 84db limiting gain, 90db rssi range lt5503 1.2ghz to 2.7ghz direct iq modulator and 1.8v to 5.25v supply, four-step rf power control, upconverting mixer 120mhz modulation bandwidth lt5506 500mhz quadrature if demodulator with vga 1.8v to 5.25v supply, 40mhz to 500mhz if, ?db to 57db linear power gain, 8.8mhz baseband bandwidth lt5546 500mhz ouadrature if demodulator with 17mhz baseband bandwidth, 40mhz to 500mhz if, 1.8v to 5.25v vga and 17mhz baseband bandwidth supply, ?db to 56db linear power gain rf power controllers ltc1757a rf power controller multiband gsm/dcs/gprs mobile phones ltc1758 rf power controller multiband gsm/dcs/gprs mobile phones ltc1957 rf power controller multiband gsm/dcs/gprs mobile phones ltc4400 sot-23 rf pa controller multiband gsm/dcs/gprs phones, 45db dynamic range, 450khz loop bw ltc4401 sot-23 rf pa controller multiband gsm/dcs/gprs phones, 45db dynamic range, 250khz loop bw ltc4403 rf power controller for edge/tdma multiband gsm/gprs/edge mobile phones downloaded from: http:///

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